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1. product pro?le 1.1 general description passivated ultra sensitive gate thyristor in a sot54 plastic package. 1.2 features 1.3 applications 1.4 quick reference data 2. pinning information ec103d1 thyristor, sensitive gate rev. 02 31 july 2008 product data sheet n ultra sensitive gate n direct interfacing to low power gate trigger circuits n earth leakage circuit breakers or ground fault circuit interrupters (gfci) n general purpose switching n solid state relays n small engine ignition n v drm 400 v n i t(rms) 0.8 a n v rrm 400 v n i gt 12 m a n i tsm 8 a (t = 10 ms) table 1. pinning pin description simpli?ed outline graphic symbol 1 anode (a) sot54 (to-92) 2 gate (g) 3 cathode (k) 1 2 3 sym037 ak g
ec103d1_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 31 july 2008 2 of 12 nxp semiconductors ec103d1 thyristor, sensitive gate 3. ordering information 4. limiting values table 2. ordering information type number package name description version ec103d1 to-92 plastic single-ended leaded (through hole) package; 3 leads sot54 table 3. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v drm repetitive peak off-state voltage - 400 v v rrm repetitive peak reverse voltage - 400 v v dsm non-repetitive peak off-state voltage - 450 v v rsm non-repetitive peak reverse voltage - 450 v i t(av) average on-state current half sine wave; t lead 92 c; see figure 1 - 0.5 a i t(rms) rms on-state current all conduction angles; see figure 4 and 5 - 0.8 a i tsm non-repetitive peak on-state current half sine wave; t j =25 c prior to surge; see figure 2 and 3 t = 10 ms - 8 a t = 8.3 ms - 9 a i 2 ti 2 t for fusing t p = 10 ms - 0.32 a 2 s di t /dt rate of rise of on-state current i tm = 2 a; i g = 10 ma; di g /dt = 0.1 a/ m s -50a/ m s i gm peak gate current - 1 a v rgm peak reverse gate voltage - 5 v p gm peak gate power - 2 w p g(av) average gate power over any 20 ms period - 0.1 w t stg storage temperature - 40 +150 c t j junction temperature - 125 c
ec103d1_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 31 july 2008 3 of 12 nxp semiconductors ec103d1 thyristor, sensitive gate form factor a = i t(rms) /i t(av) fig 1. total power dissipation as a function of average on-state current; maximum values f = 50 hz fig 2. non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values 003aaa111 0.0 0.2 0.4 0.6 0.0 0.1 0.2 0.3 0.4 0.5 0.6 i t(av) (a) p tot (w) a =1.57 1.9 2.2 2.8 4 conduction angle (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 a 003aaa110 4 6 2 8 10 i tsm (a) 0 number of cycles 1 10 3 10 2 10 t p t j(init) = 25 c max i t i tsm t
ec103d1_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 31 july 2008 4 of 12 nxp semiconductors ec103d1 thyristor, sensitive gate t p 10 ms fig 3. non-repetitive peak on-state current as a function of pulse duration; maximum values f = 50 hz t lead = 92 c fig 4. rms on-state current as a function of surge duration; maximum values fig 5. rms on-state current as a function of lead temperature; maximum values 003aac340 10 10 2 10 3 10 -5 10 -4 10 -3 10 -2 t p (s) i tsm (a) t p t j (init) = 25 c max i t i tsm t 003aaa117 0 2 4 6 8 10 12 10 -2 10 -1 1 10 surge duration (s) i t(rms) (a) 003aaa116 0 0.2 0.4 0.6 0.8 1 -50 0 50 100 150 t lead ( c) i t(rms) (a)
ec103d1_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 31 july 2008 5 of 12 nxp semiconductors ec103d1 thyristor, sensitive gate 5. thermal characteristics table 4. thermal characteristics symbol parameter conditions min typ max unit r th(j-lead) thermal resistance from junction to lead see figure 6 --60k/w r th(j-a) thermal resistance from junction to ambient printed-circuit board mounted; lead length 4 mm - 150 - k/w fig 6. transient thermal impedance from junction to lead as a function of pulse duration 003aaa108 1 10 2 10 - 1 10 z th(j-lead) (k/w) 10 - 2 t p (s) 10 - 5 110 10 - 1 10 - 2 10 - 4 10 - 3 t p t p t p t t d =
ec103d1_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 31 july 2008 6 of 12 nxp semiconductors ec103d1 thyristor, sensitive gate 6. characteristics table 5. characteristics t j = 25 c unless otherwise stated. symbol parameter conditions min typ max unit static characteristics i gt gate trigger current v d = 12 v; i t = 0.1 a; see figure 8 -312 m a i l latching current v d = 12 v; i gt = 0.5 ma; r gk =1k w ; see figure 10 - 26ma i h holding current v d = 12 v; i gt = 0.5 ma; r gk =1k w ; see figure 11 - 25ma v t on-state voltage i t = 1 a - 1.2 1.35 v v gt gate trigger voltage i t = 10 ma; see figure 7 v d = 12 v - 0.5 0.8 v v d =v drm(max) ; t j = 125 c 0.2 0.3 - v i d off-state current v d =v drm(max) ; t j = 125 c; r gk =1k w - 0.05 0.1 ma i r reverse current v r =v rrm(max) ; t j = 125 c; r gk =1k w - 0.05 0.1 ma dynamic characteristics dv d /dt rate of rise of off-state voltage v dm = 0.67 v drm(max) ; t j = 125 c; exponential waveform; r gk = 1 k w ; see figure 12 - 150 - v/ m s t gt gate-controlled turn-on time i tm = 2 a; v d =v drm(max) ;i g = 10 ma; di g /dt = 0.1 a/ m s -2- m s t q commutated turn-off time v dm = 0.67 v drm(max) ; t j = 125 c; i tm = 1.6 a; v r =35v; (di t /dt) m =30a/ m s; dv d /dt = 2 v/ m s; r gk =1k w - 100 - m s
ec103d1_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 31 july 2008 7 of 12 nxp semiconductors ec103d1 thyristor, sensitive gate fig 7. normalized gate trigger voltage as a function of junction temperature fig 8. normalized gate trigger current as a function of junction temperature v o = 0.895 v r s = 0.195 w (1) t j = 125 c; typical values (2) t j = 125 c; maximum values (3) t j = 25 c; typical values r gk =1k w fig 9. on-state current as a function of on-state voltage fig 10. normalized latching current as a function of junction temperature t j ( c) - 50 150 100 050 003aaa112 0.8 1.2 1.6 0.4 v gt v gt(25 c) t j ( c) - 50 150 100 050 003aaa113 0.8 1.2 2.0 0 i gt i gt(25 c) 0.4 1.6 003aaa109 v t (v) 0.4 1.6 1.2 0.8 1.0 1.5 0.5 2.0 2.5 i t (a) 0 (1) (2) (3) t j ( c) - 50 150 100 050 003aaa114 0.8 1.2 2.0 0 i l i l(25 c) 0.4 1.6
ec103d1_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 31 july 2008 8 of 12 nxp semiconductors ec103d1 thyristor, sensitive gate 7. package information epoxy meets requirements of ul 94 v-0 at 3.175 mm r gk =1k w (1) r gk =1k w fig 11. normalized holding current as a function of junction temperature fig 12. critical rate of rise of off-state voltage as a function of junction temperature; typical values t j ( c) - 50 150 100 050 003aaa115 0.8 1.2 2.0 0 i h i h(25 c) 0.4 1.6 003aac341 t j ( c) 0 150 100 50 10 3 10 2 10 4 dv d /dt (v/ m s) 10 (1)
ec103d1_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 31 july 2008 9 of 12 nxp semiconductors ec103d1 thyristor, sensitive gate 8. package outline fig 13. package outline sot54 (to-92) unit a references outline version european projection issue date iec jedec jeita mm 5.2 5.0 b 0.48 0.40 c 0.45 0.38 d 4.8 4.4 d 1.7 1.4 e 4.2 3.6 l 14.5 12.7 e 2.54 e 1 1.27 l 1 (1) max. 2.5 b 1 0.66 0.55 dimensions (mm are the original dimensions) note 1. terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. sot54 to-92 sc-43a 04-06-28 04-11-16 a l 0 2.5 5 mm scale b c d b 1 l 1 d e plastic single-ended leaded (through hole) package; 3 leads sot54 e 1 e 1 2 3
ec103d1_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 31 july 2008 10 of 12 nxp semiconductors ec103d1 thyristor, sensitive gate 9. revision history table 6. revision history document id release date data sheet status change notice supersedes ec103d1_2 20080731 product data sheet - ec103d1-01 modi?cations: ? the format of this data sheet has been redesigned to comply with the new identity guidelines of nxp semiconductors. ? legal texts have been adapted to the new company name where appropriate. ? t ab le 3 limiting v alues on page 2 ; v dsm and v rsm added. ? t ab le 5 char acter istics on page 6 ; dv d /dt uprated. ? figure 4 on page 4 ; graph redrawn. ? figure 6 on page 5 ; graph redrawn. ? figure 11 ; graph added. ? figure 12 ; graph added. ec103d1-01 (9397 750 08574) 20011101 product data - -
ec103d1_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 31 july 2008 11 of 12 nxp semiconductors ec103d1 thyristor, sensitive gate 10. legal information 10.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 10.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 10.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. quick reference data the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 10.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 11. contact information for more information, please visit: http://www .nxp.com for sales of?ce addresses, please send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors ec103d1 thyristor, sensitive gate ? nxp b.v. 2008. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 31 july 2008 document identifier: ec103d1_2 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 12. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 1 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics. . . . . . . . . . . . . . . . . . . 5 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 7 package information . . . . . . . . . . . . . . . . . . . . . 8 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 10 legal information. . . . . . . . . . . . . . . . . . . . . . . 11 10.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 10.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 10.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 10.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 11 contact information. . . . . . . . . . . . . . . . . . . . . 11 12 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

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